2n6517 ? npn epitaxial silicon transistor ? 2010 fairchild semiconductor corporation www.fairchildsemi.com 2n6517 rev. b1 1 august 2010 2n6517 npn epitaxial silicon transistor features ? high voltage transistor ? collector dissipation: p c (max) = 625mw ? complement to 2n6520 ? suffix ?-c? means center collector (1. emitter 2. collector 3. base) absolute maximum ratings t a = 25c unless otherwise noted electrical characteristics t a = 25c unless otherwise noted symbol parameter value units v cbo collector-base voltage 2n6517 2n6517c 350 400 v v v ceo collector-emitter voltage 2n6517 2n6517c 350 400 v v v ebo emitter-base voltage 6 v i c collector current 500 ma p c collector power dissipation 625 mw t j junction temperature 150 c t stg storage temperature -55 ~ 150 c symbol parameter conditions min. max. units bv cbo collector-base breakdown voltage 2n6517 2n6517c i c = 100 a, i e = 0 i c = 100 a, i e = 0 350 400 v v bv ceo collector-emitter breakdown voltage * 2n6517 2n6517c i c = 1ma, i b = 0 i c = 1ma, i b = 0 350 400 v v bv ebo emitter-base breakdown voltage i e = 10 a, i c = 0 6 v i cbo collector cut-off current v cb = 250v, i e = 0 50 na i ebo emitter cut-off current v eb = 5v, i c = 0 50 na h fe dc current gain * 2n6517/2n6517c 2n6517/2n6517c 2n6517/2n6517c 2n6517/2n6517c 2n6517/2n6517c 2n6517c v ce = 10v, i c = 1ma v ce = 10v, i c = 10ma v ce = 10v, i c = 30ma v ce = 10v, i c = 50ma v ce = 10v, i c = 100ma v ce = 10v, i c = 5ma 20 30 30 20 15 50 200 200 200 1. emitter 2. base 3. collector to-92 1
2n6517 ? npn epitaxial silicon transistor ? 2010 fairchild semiconductor corporation www.fairchildsemi.com 2n6517 rev. b1 2 electrical characteristics (continued) t a = 25c unless otherwise noted * pulse test: pulse width 300 s, duty cycle 2% symbol parameter conditions min. max. units v ce(sat) collector-emitter saturation voltage i c = 10ma, i b = 1ma i c = 20ma, i b = 2ma i c = 30ma, i b = 3ma i c = 50ma, i b = 5ma 0.3 0.35 0.5 1 v v v v v be(sat) base-emitter saturation voltage i c = 10ma, i b = 1ma i c = 20ma, i b = 2ma i c = 30ma, i b = 3ma 0.75 0.85 0.9 v v v c ob output capatitance v cb = 20v, i e = 0, f = 1mhz 6 pf f t current gain bandwidth product * i c = 10ma, v ce = 20v, f = 20mhz 40 200 mhz v be(on) base-emitter on voltage i c = 100ma, v ce = 10v 2 v
2n6517 ? npn epitaxial silicon transistor ? 2010 fairchild semiconductor corporation www.fairchildsemi.com 2n6517 rev. b1 3 typical performance characteristics figure 1. dc current gain figure 2. saturation voltage figure 3. saturation voltage figure 4. emitter cut off current figure 5. collector cutoff current figure 6. base-emitter on voltage 1 10 100 1000 0.1 1 10 100 1000 v ce = 10v ta = 25 o c ta = 75 o c ta = 125 o c h fe , dc current gain i c [ma], collector current 1 10 100 1000 0.01 0.1 1 10 100 ta = 25 o c ta = 75 o c i c = 10 i b ta = 125 o c v ce (sat) [v], saturation voltage i c [ma], collector current 1 10 100 1000 0.1 1 ta = 125 o c ta = 75 o c ta = 25 o c i c = 10 i b v be (sat) [v], saturation voltage i c [ma], collector current 123456 1e-3 0.01 0.1 1 10 100 ta = 125 o c ta = 75 o c ta = 25 o c i ebo [na], emitter cut off current v eb [v], emitter-base voltage 50 100 150 200 250 300 350 0.1 1 10 100 1000 10000 ta = 125 o c ta = 75 o c ta = 25 o c i cbo [na], collector cutoff current v cb [v], collector-base voltage 1 10 100 1000 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v ce = 10v ta = 25 o c v be (on) [v], base-emitter on voltage i c [ma], collector current
2n6517 ? npn epitaxial silicon transistor ? 2010 fairchild semiconductor corporation www.fairchildsemi.com 2n6517 rev. b1 4 typical performance characteristics (continued) figure 7. output capacitance figure 8. input capacitance figure 9. current gain bandwidth product figure 10. resistive load switching figure 11. resistive load switching 0 20406080100 1.0 1.2 1.4 1.6 1.8 2.0 f = 1mhz c cb [pf], collector-base capacitance v cb [v], collector-base voltage 1.01.52.02.53.03.54.04.55.0 20 25 30 35 40 45 50 f = 1mhz c eb [pf], emitter-base capacitance v eb [v], emitter-base voltage 1 10 100 1 10 100 ft [mhz], current gain bandwidth i c [ma], collector current 10 100 10 100 1000 t on t d t r v cc =100v i c =5i b1 =-5i b2 , ta=25 o c t d , t r & t on [ns], switching time i c [ma], collector current 10 100 10 100 1000 10000 t off t f t stg v cc =100v i c =5i b1 =-5i b2 , ta=25 o c t stg , t f & t off [ns], switching time i c [ma], collector current
2n6517 ? npn epitaxial silicon transistor ? 2010 fairchild semiconductor corporation www.fairchildsemi.com 2n6517 rev. b1 5 physical dimensions 0.46 0.10 1.27typ (r2.29) 3.86max [1.27 0.20 ] 1.27typ [1.27 0.20 ] 3.60 0.20 14.47 0.40 1 .02 0.10 (0.25) 4.58 0.20 4.58 +0.25 ?.15 0.38 +0.1 0 ?.0 5 0.38 +0.10 ?.05 to-92 dimensions in millimeters
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